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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
1/2 ALD1103
V+ = +5V
I SET
R SET
Q 3
Q 4
Q 3
Q 4
I SOURCE
Digital Logic Control
I SET
R SET
I SOURCE
of Current Source
Q 1
Q 2
I SOURCE = I SET
= V+ -Vt
ON
Q 1
1/4 ALD1103
= 4
ALD1103
Q 1 , Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
DIFFERENTIAL AMPLIFIER
~
R SET
R SET
OFF
Q 1 : N - Channel MOSFET
Q 3, Q 4 : P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
V+
V+ = +5V
PMOS PAIR
I SET
R SET
Q 3
Q 4
V OUT
I SOURCE = I SET x N
V IN +
Q 1
Q 2
NMOS PAIR
V IN -
Q SET
Q 1
Q 2
Q 3
Q N
ALD1103
Current
Source
Q 1 , Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
Q SET, Q 1 ..Q N : ALD 1101 or ALD 1103
N - Channel MOSFET
ALD1103
Advanced Linear Devices
5 of 9
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相关代理商/技术参数
ALD1103SB 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1103SBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105_12 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105DB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PBL 功能描述:MOSFET Dual P&N-Ch. Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1105SB 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET